□ 高氘含量晶体
□ 无静态双折射
□ 无光折变损伤
□ 抗潮解
□ 优异的电光特性
□ 高消光比
□ 高损伤阈值
□ 低1/4波电压
□ 高透过率
□ 无密封剂和粘合剂
□ 紧凑设计
□ 易于调节
[ EOD-5Ga]
型号/ Type
EOD-5Ga
外部尺寸/ External Dimension
Ф15×18mm
通光孔径/ Clear Aperture
Ф5mm
> 98%
波前畸变/ Wavefront Distortion@633nm
<
λ/8
静态消光比/ Static Extinction
Ratio@1064nm
> 5000:1
λ/4电压/ λ/4
Voltage@1064nm
3200V+/-200V
电容/Capacitance
2.0 pF
抗光伤阈值/ Laser Induced Damage
Threshold
500MW/cm²@1064nm,10ns,10Hz
[ EOD-8Ga]
型号/ Type
EOD-8Ga
外部尺寸/ External Dimension
Ф19×24mm
通光孔径/ Clear Aperture
Ф8 mm
> 98%
波前畸变/ Wavefront Distortion@633nm
<
λ/8
静态消光比/ Static Extinction
Ratio@1064nm
> 5000:1
λ/4电压/ λ/4
Voltage@1064nm
3200V+/-200V
电容/Capacitance
4.5 pF
抗光伤阈值/ Laser Induced Damage
Threshold
500MW/cm²@1064nm,10ns,10Hz
[ EOD-8Sh]
|
型号/ Type |
EOD-8Sh |
|
外部尺寸/ External Dimension |
Ф19×25mm |
|
通光孔径/ Clear Aperture |
Ф8 mm |
|
> 98.5% |
|
|
波前畸变/ Wavefront Distortion@633nm |
< λ/8 |
|
静态消光比/ Static Extinction Ratio@1064nm |
> 7000:1 |
|
λ/4电压/ λ/4 Voltage@1064nm |
3000V+/-200V |
|
电容/Capacitance |
4.5 pF |
|
抗光伤阈值/ Laser Induced Damage Threshold |
750MW/cm²@1064nm,10ns,10Hz |
型号/ Type
EOD-10Ga
外部尺寸/ External Dimension
Ф25.4×32mm
通光孔径/ Clear Aperture
Ф10 mm
> 98%
波前畸变/ Wavefront Distortion@633nm
<
λ/8
静态消光比/ Static Extinction
Ratio@1064nm
> 5000:1
λ/4电压/ λ/4
Voltage@1064nm
3200V+/-200V
电容/Capacitance
5.5 pF
抗光伤阈值/ Laser Induced Damage
Threshold
500MW/cm²@1064nm,10ns,10Hz
[EOD-10GPa]
|
型号/ Type |
EOD-10GPa |
|
外部尺寸/ External Dimension |
Ф25.4×39mm |
|
通光孔径/ Clear Aperture |
Ф10 mm |
|
> 98% |
|
|
波前畸变/ Wavefront Distortion@633nm |
< λ/8 |
|
静态消光比/ Static Extinction Ratio@1064nm |
> 5000:1 |
|
λ/4电压/ λ/4 Voltage@1064nm |
3200V+/-200V |
|
电容/Capacitance |
5.5 pF |
|
抗光伤阈值/ Laser Induced Damage Threshold |
500MW/cm²@1064nm,10ns,10Hz |
[EOD-13Ga]
|
型号/ Type |
EOD-13Ga |
|
外部尺寸/ External Dimension |
Ф25.3×42.5mm |
|
通光孔径/ Clear Aperture |
Ф13mm |
|
> 98% |
|
|
波前畸变/ Wavefront Distortion@633nm |
< λ/8 |
|
静态消光比/ Static Extinction Ratio@1064nm |
> 5000:1 |
|
λ/4电压/ λ/4 Voltage@1064nm |
3200V+/-200V |
|
电容/Capacitance |
8 pF |
|
抗光伤阈值/ Laser Induced Damage Threshold |
500MW/cm²@1064nm,10ns,10Hz |
